logo

FDS86106 Datasheet, Fairchild Semiconductor

FDS86106 mosfet equivalent, mosfet.

FDS86106 Avg. rating / M : 1.0 rating-111

datasheet Download

FDS86106 Datasheet

Features and benefits

General Description
* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
* High performance trench technology fo.

Application


* Synchronous Rectifier
* Primary Switch For Bridge Topology D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S.

Description


* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mou.

Image gallery

FDS86106 Page 1 FDS86106 Page 2 FDS86106 Page 3

TAGS

FDS86106
MOSFET
FDS86140
FDS86141
FDS86240
Fairchild Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts