FDS86106 mosfet equivalent, mosfet.
General Description
* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
* High performance trench technology fo.
* Synchronous Rectifier
* Primary Switch For Bridge Topology
D D D
D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S.
* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
* Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used
surface mou.
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